01.06.2005 Overview
 

It´s Showtime! - Highlights on the LASER tradeshow, Munich, June 13th to 16th

High-power OSTAR now also available as an IR LED - A new addition to the family in the non-visible range

High-power OSTAR now also available as an IR LED - A new addition to the family in the non-visible range

OSTAR Observation is the most powerful infrared (IR) light-emitting diode (LED) from OSRAM Opto Semiconductors and takes the OSTAR family into the non-visible range. The OSTAR Observation comprises ten thin-film chips that provide an impressive output of 5 W at 1 A forward current. The minimum life of the LED is 10,000 hours.

Like other members of the OSTAR family, the OSTAR Observation measures just 3 x 1 cm, yet it emits infrared light with a wavelength of 850 nm rather than visible light. This small area accommodates two rows of five 1 mm_ thin-film chips. As a surface emitter, the IR LED emits almost all of its internally generated light from the top. This enables the LED to achieve excellent optical output, which is ideal for external optics. With a forward current of 1 A, it produces an output of 5 W, and its specially adapted package ensures that the resultant generated heat is reliably removed. Its thermal resistance is 4 K per W.

At 850 nm, the wavelength of the emitted infrared light is well suited for sensors in both CMOS and CCD cameras. The high optical output ensures that the surrounding area is well covered. In a vehicle .s night vision system, for example, the OSTAR achieves a range of up to 150 m.

In previously used halogen lamps, other spectrum components must first be filtered out. In contrast, the IR LED does not need a filter. It is also much smaller and can be easily installed. The equipment in which it is installed can therefore be made more compact and flexible.

OSTAR was launched in November 2004 and is OSRAM Opto Semiconductors . brightest light source. The OSTAR Observation is the third member of this brilliant family. Other family members include v Lighting and OSTAR Projection.

Powerful pumping laser diode now offers passive cooling - Laser diodes on the move
OSRAM Opto Semiconductors has developed an air-cooled version of the SIRILAS laser diode for mobile applications that require less output and no water cooling. The module, impressive for its compact design, contains a laser bar comprising 16 individual emitters. It can be integrated in diode laser arrays and are individually replaced and therefore easily maintained.

Normal circulating air and simple equipment such as fans or thermoelectric coolers (TEC) are all that are needed for efficiently cooling the new SIRILAS laser diode. Its heat sink consists of solid copper material with high thermal conductivity. The new laser diode follows the more powerful water-cooled SIRILAS version and is particularly suitable for mobile and other applications where water cooling is not possible, as with laser equipment for medical use. An integrated lens produces an almost parallel beam with a typical vertical divergence of 1.5° (full angle).

The air-cooled version is used for pumping compact, solid-state lasers of low-to-medium output. With a wavelength of 808 nm, it is suitable for neodym-doped, solid-state lasers (Nd-YAG). These are used in marking or engraving applications, mobile medical equipment for ophthalmology and dentistry and in the consumer sector for cosmetic treatment, such as depilation. Chips with other wavelengths (800 nm to 1000 nm) can also be integrated in the package.

On its launch, the new SIRILAS is expected to achieve an output of 20 W.

Laser bars with stable 150W outputs - Pushing the boundaries
The new laser bars from OSRAM Opto Semiconductors combine high output and enhanced reliability. They can be integrated in different packages and are ideal for pumping solid-state lasers and for direct material processing.

This high output has been achieved through process optimization and improvements in semiconductor design. The special single-quantum well structure not only reduces the laser threshold but also the absorption in the semiconductor. This results in powerful and durable laser diodes with efficiency values as high as 65%. The latest example is a laser diode prototype with an emission wavelength of 940 nm. The prototype achieves an output of 150 W from a 10 mm bar and has a lifespan of up to 20,000 hours. The optimized semiconductor structure offers more space for the resonator but has the same standard bar length. A longer resonator means there is a greater cooling area, enabling heat to be removed more quickly.

Numerous standard solutions are currently available with wavelengths from 780 to 980 nm, outputs from 40 to 150 W and a range of different structures that offer brilliant beam quality.